Amorphous Carbo-Nitride Film by Plasma CVD.

Amorphous Boron containing Silicon Carbo-Nitrides created by ion sputtering

Silicon carbo-nitride films with Boron were deposited onto Silicon, glass and SS304 Stainless Steel substrates using the ion beam assisted deposition (IBAD) method. The coating composition, rate of ion-assistance and substrate temperature were varied. Films were examined by X-Ray Diffraction, Scanning Electron microscopy, Energy Dispersive X-Ray analysis, Cathodoluminescence, Atomic Force Micro...

Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD

We investigate the impact of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs). It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic mechanical stress in the a-Si:H layer. We study a series of bottom-gate TFTs incorporating a-Si:H deposited by VHF PECVD and hot-wire CVD. All TFTs...

Deposition of Boron Nitride by Plasma Enhanced Cvd Using Borane Amine

BN has been deposited with plasma enhanced CVD using borane dimethyl amine and NH3. The resulting layers are stable in air, although they contain an excess of boron, the actual amount depending on the deposition conditions. The presence of relatively large amounts of carbon in the layers indicates the incomplete decomposition of the organic fragment. Generally the layers posses the turbostratic...

Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

Control of Film Uniformity Properties in a Planetary Radial-flow Gallium Nitride Cvd System

The development and application of a geometrically-based uniformity criterion is presented for film uniformity optimization in a radial-flow GaN epitaxy reactor system. In this multi-wafer reactor system, individual wafers rotate on a rotating susceptor in a planetary motion to reduce the effects of reactant depletion on deposition uniformity; the uniformity criterion developed for this system ...